d e s c r i p t i o n designed for use in switching power supplies. inverters and as free wheeling diodes. these state-of-the-art devices have the following feature. f e a t u r e s * low power loss, high efficiency * low forward voltage, high current capability * low stored charge majority carrier conduction * high surge capacity h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 2 e l ek tr on isch e b a u e lemen te s fp104~sfp105 voltage 400 and 600 m a x i m u m r a t i n g s and electrical characteristics 10.0amp super fast rectifier diodes 1 0 . 0 5 0 . 0 5 3 . 2 0 . 0 5 6 . 6 0 . 0 5 3 . 1 0 . 1 4 . 3 0 . 1 5 0 . 6 0 . 0 5 2 . 7 0 . 0 5 2 . 5 5 1 3 . 4 0 . 0 5 0 . 6 0 . 0 5 2 . 5 5 0 . 0 5 1 . 2 0 . 0 5 2 . 7 0 . 0 5 1 5 . 1 0 . 0 5 i t o - 2 2 0 d i m e n s i o n s i n m i l l i m e t e r s 0 0 5 p i n 1 p i n 3 p i n 2 * plastic material used carries underwriters laboratory * glass passivated chip junctions * 150 c operating junction temperature * high-switching speed 50 & 75 nanosecond recovery time o ch ar ac t er i s t i c peak repetitive reverse voltage working peak reverse voltage dc blocking voltage rms reverse voltage average recitifier forward current (per leg) c total device (rated v r ),t c =100 peak repetitive forward current (rate v r ,square wave,20khz,t c =125 c) typical junction capacitance (reverse voltage of 4v & f=1mhz) non-repetitive peak surge current (surge applied at rate load conditions halfware,single phase, 60hz) reverse recovery time (i f =0.5a,i r =1.0,irr=0.25a) maximum instantaneous forward voltage (i f = 5a, t c =25 c) (i f = 5a, t c =125 c) 5.0 10 10 200 50 1.30 1.16 -65 ~ +150 a a a trr 280 420 400 600 100 operating and storage temperature range tj,tstg c sy m b o l SFP104 sfp105 un i t v rrm v rwm v r v v v r(rms) i f(av) i fm i fsm v f 1.50 1.38 v maximum instantaneous reverse current (rated dc voltage, t c =25 c) (rated dc voltage, t c =125 c) 5.0 i r ua ns pf c p 70 60 rohs compliant product a suf fix of "-c" specifies halogen-free
- j u n - 2 0 0 2 r e v . a p a g e 2 of 2 01 h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l e l ek tr on isch e b a u e lemen te SFP104~sfp105 voltage 400 and 600 10.0amp super fast rectifier diodes fig-3 for w ard current dera ting cur ve a verage for w ard rect ified current (a m p .) lead tempera t ure ( j ) fig-4ty p ical junction cap a cit a nce j unct ion cap a cit a nce ( p f) reverse voltage (volts.) fig-5peak forward surge current peak forward surge current (amp.) number of cycles at 60 hz fig-1 typical forward characterisitics average forward rectified current (amp.) f o r w a r d v o l t a g e ( v o l t s ) s f p 1 0 4 s f p 1 0 5 s f p 1 0 4 s f p 1 0 5 p e r c e n t o f p e a k r e v e r s e v o l t a g e ( m ) s f p 1 0 4 s f p 1 0 5 fig-2 typical reverse characteristics instantaneous reverse current (ua.) set time base for 10/20 ns/cm fig-6 reverse recovery time characteristic and test circuit diagram s f p 1 0 4 s f p 1 0 5
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